 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STL100NHS3LL N-channel 30V - 0.0032 - 22A - PowerFLATTM (6x5) STripFETTM Power MOSFET plus monolithic Schottky Preliminary Data Features Type STL100NHS3LL VDSS 30V RDS(on) < 0.0042 ID 22A(1) 1. This value is rated according to Rthj-pcb Optimal RDS(on) x Qg trade-off @ 4.5V Reduced switching losses Reduced conduction losses Improved junction-case thermal resistance PowerFLATTM(6x5) Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the latest advanced design rules of ST's proprietary STripFETTM technology and a proprietary process for integrating a monolithic Schottky diode. The new Power MOSFET is optimized for the most important demanding synchronous switch function in DCDC converter for Computer and Telecom. Table 1. Device summary Marking L100NHS3LL Package PowerFLATTM (6 x 5) Packaging Tape & reel Order code STL100NHS3LL September 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STL100NHS3LL 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (continuous) at TC = 25C Drain current (pulsed) Total dissipation at TC = 25C Total dissipation at TC = 25C Operating junction temperature Storage temperature Value 30 16 22 13.7 100 88 80 4 -55 to 150 Unit V V A A A A W W C ID (1) ID(2) IDM (3) PTOT(1) PTOT(2) Tj Tstg 1. The value is rated accordingly to Rthj-pcb 2. This value is according Rthj-c 3. Pulse width limited by safe operating area Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal resistance Parameter Thermal resistance junction-case (drain) Max Thermal resistance junction-pcb Max Value 1.56 31.3 Unit C/W C/W 1. When mounted on FR-4 board of 1inch2, 2 oz. Cu., t<10sec Table 4. Symbol IAV EAS Thermal resistance Parameter Avalanche current, not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25C, ID=IAV, VDD=24V) Value 10 1.8 Unit A J 2/9 STL100NHS3LL Electrical characteristics 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Test conditions ID = 1mA, VGS= 0 VDS = 24V VDS = 16V VDS= VGS, ID = 1mA VGS= 10V, ID= 11A VGS= 4.5V, ID= 11A VGS=10V, ID=11A@125C VGS=4.5V, ID=11A@125C 1 Min. 30 500 100 2.5 0.0032 0.0042 0.004 0.0057 0.005 0.006 Typ. Max. Unit V A nA V RDS(on) Static drain-source on resistance Table 6. Symbol Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 4200 700 46.2 27 8.5 7.2 35 Max. Unit pF pF pF nC nC nC VDS=25V, f = 1MHz, VGS=0 VDD = 15V, ID = 22A, VGS = 4.5V (see Figure 3) 3/9 Electrical characteristics STL100NHS3LL Table 7. Symbol Switching times Parameter Test conditions VDD = 15V, ID = 11A , RG= 4.7 VGS= 10V, (see Figure 2), (see Figure 7) VDD = 15V, ID = 11A , RG= 4.7 VGS= 10V, (see Figure 2) (see Figure 7) Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time 16 45 ns ns td(off) tf Turn-off delay time Fall time 68 8 ns ns Table 8. Symbol ISD ISDM VSD (1) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5A, VGS = 0 ISD = 22V, di/dt = 100A/s VDD = 20V, Tj = 25C (see Figure 4) 30 30 2 Test conditions Min. Typ. Max 22 88 0.75 Unit A A V ns nC A 1. Pulsed: Pulse duration = 300s, duty cycle 1.5% 4/9 STL100NHS3LL Test circuit 3 Figure 2. Test circuit Switching times test circuit for resistive load Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform 5/9 Package mechanical data STL100NHS3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STL100NHS3LL Package mechanical data PowerFLATTM (6x5) MECHANICAL DATA mm. DIM. MIN. A A1 A3 b D D1 D2 E E1 E2 E4 e L 0.70 3.43 2.58 4.15 0.35 0.80 TYP 0.83 0.02 0.20 0.40 5.00 4.75 4.20 6.00 5.75 3.48 2.63 1.27 0.80 0.90 0.027 3.53 2.68 0.135 4.25 0.163 0.47 0.013 MAX. 0.93 0.05 MIN. 0.031 TYP. 0.032 0.0007 0.007 0.015 0.196 0.187 0.165 0.236 0.226 0.137 0.103 0.050 0.031 0.035 0.139 0.105 0.167 0.018 MAX. 0.036 0.0019 inch 7/9 Revision history STL100NHS3LL 5 Revision history Table 9. Date 03-Sep-2007 Document revision history Revision 1 First release Changes 8/9 STL100NHS3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
Price & Availability of STL100NHS3LL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |